This introductory chapter considers the basic principles of operation of diode lasers. The condition of inverse population in semiconductors is derived from Fermi statistics. Light confinement in a laser cavity, including transverse and longitudinal optical modes, is discussed. Main device characteristics of a diode laser, such as light-current and current-voltage curves as well as power conversion efficiency are described in their relation with the internal parameters of the active region. Optical gain and its relationship with laser threshold are considered. Electronic structure of solid state and microscopic theory of optical gain are briefly summarized in the chapter. Size quantization in semiconductors caused by energy barriers at heterointerfaces is considered. Density of states for various types of size dimensionality is presented. Effect of the density of states in the laser active region on the gain characteristics is discussed with attention to the ideal quantum dot array.
Oxford Scholarship Online requires a subscription or purchase to access the full text of books within the service. Public users can however freely search the site and view the abstracts and keywords for each book and chapter.
If you think you should have access to this title, please contact your librarian.