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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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Structural and electronic properties of self-organized quantum dots

Structural and electronic properties of self-organized quantum dots

(p.62) 3 Structural and electronic properties of self-organized quantum dots
Quantum Dot Lasers

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Oxford University Press

This chapter includes an overview of the basic principles of quantum-dot formation using self-organization phenomena in lattice-mismatched materials. A relationship between lattice mismatch and critical thickness for dislocation formation and island growth mode is discussed. Main structural and optical properties of self-organized quantum dots are then discussed and how they correlate to each other. Special attention is paid to the methods that allow control of the emission wavelength, localization energy, and surface density of QDs. A majority of experimental examples relates to InGaAs/GaAs material system. In addition, quantum dot formation driven by the elastic strain relaxation is reviewed for a wide class of alternative material systems, including GaSb/GaAs, InP/GaP, InGaAsN/GaAs, III-N, III-V/Si, and Ge/Si. The specific aspects of QD formation in these systems as well as the structural and optical properties are discussed.

Keywords:   self-organized quantum dots, transmission electron microscopy, electronic levels, optical emission

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