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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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Quantum-dot edge-emitting lasers

Quantum-dot edge-emitting lasers

(p.130) 5 Quantum-dot edge-emitting lasers
Quantum Dot Lasers

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Oxford University Press

This chapter provides an historical overview of the development of quantum dot edge-emitting lasers from their first demonstration to the present status. Issues of gain saturation and temperature instability in initial lasers based on a single plane of self-organized quantum dots are discussed. Several approaches to improve the performance of InGaAs quantum dot lasers are discussed in detail: increase of the QD density of states by stacking of quantum dots; use of matrix material having a higher bandgap energy; seeding of quantum dots to increase their density; and sub-monolayer formation of quantum dots to increase their density and improve uniformity. At the end of the chapter, experimental results for representative quantum-dot lasers grown on non-GaAs substrates are presented.

Keywords:   edge-emitting lasers, quantum dot lasers, threshold current, quantum dot stacking, InGaAs

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