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Quantum Dot Lasers$
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Victor M. Ustinov, Alexey E. Zhukov, Anton Yu. Egorov, and Nikolai A. Maleev

Print publication date: 2003

Print ISBN-13: 9780198526797

Published to Oxford Scholarship Online: January 2010

DOI: 10.1093/acprof:oso/9780198526797.001.0001

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Long-wavelength emitters on GaAs

Long-wavelength emitters on GaAs

(p.155) 6 Long-wavelength emitters on GaAs
Quantum Dot Lasers

Victor M. Ustinov

Alexey E. Zhukov

Anton Yu. Egorov

Nikolai A. Maleev

Oxford University Press

This chapter is devoted to laser structures on GaAs substrates, which are capable of operating near the 1.3-um spectral window. Firstly, motivation for long-wavelength emitters on GaAs is discussed and possible semiconductor materials, suitable for 1.3-um application, are compared. The main part of the chapter is focused on long-wavelength quantum dot lasers. Various approaches for epitaxial deposition of long-wavelength QDs are described. The device characteristics of diode lasers comprising quantum dots formed either with atomic layer epitaxy or dots-in-a-well method are then compared. Efficiency, threshold, and temperature characteristics of long-wavelength QD lasers are also discussed. For the sake of comparison, data on non-QD laser structures are presented. InGaAsN quantum wells and diode lasers based on them are also discussed in detail.

Keywords:   long-wavelength emission, GaAs-based lasers, quantum dot lasers, dots-in-a-well, InGaAsN quantum well

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