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Advanced Ferroelectricity$
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Robert Blinc

Print publication date: 2011

Print ISBN-13: 9780199570942

Published to Oxford Scholarship Online: January 2012

DOI: 10.1093/acprof:oso/9780199570942.001.0001

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Ferroelectric thin films

Ferroelectric thin films

(p.215) 9 Ferroelectric thin films
Advanced Ferroelectricity

Robert Blinc

Oxford University Press

The development of thin films integrated into semiconductor chips allowed for the development of ferroelectric memories with high information density. The old question of how many unit cells are necessary that ferroelectricity, which is a collective phenomenon, does not disappear, thus became important not only for basic physics but also for technology. The film‐thickness dependence of the out‐of‐plane polarization and depolarizing field is presented. It is shown that the retention time due to thermodynamic nucleation of reversed domains imposes a new fundamental size limit for ferroelectric devices that is higher than the critical thickness for the disappearance of ferroelectricity due to depolarizing fields. The Tilley–Žekš model of phase transitions in thin films is discussed and the polarization profiles are presented. The effect of film thickness on the misfit strain induced magnetoelectric coupling is also treated.

Keywords:   critical size, thin films, ferroelectricity, polarization retention time, Tilley–Žekš, model, thin films, misfit‐strain‐induced magnetoelectricity, film‐thickness dependence

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