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III-Nitride Semiconductors and their Modern Devices - Oxford Scholarship Online
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III-Nitride Semiconductors and their Modern Devices

Bernard Gil


This book is dedicated to GaN and its alloys AlGaInN (III–V nitrides), which are semiconductors with intrinsic properties well suited for visible and ultraviolet (UV) light emission and electron devices working at high temperature and high frequency and in harsh environments. The context is a rapid growth of the industrial activity related to GaN which ranks it at the second position (after Si) among all semiconductors, with a total market of $12 billion in 2012, mainly due to light-emitting diodes (LEDs), but also to the emergence of lasers and high-power/high-frequency electronics. The secon ... More

Keywords: ultraviolet optoelectronics, high-frequency transistors, high-power transistors

Bibliographic Information

Print publication date: 2013 Print ISBN-13: 9780199681723
Published to Oxford Scholarship Online: January 2014 DOI:10.1093/acprof:oso/9780199681723.001.0001


Affiliations are at time of print publication.

Bernard Gil, editor
Director of Research at CNRS, University of Montpellier 2

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2 The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays

Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski

4 The growth of bulk aluminum nitride

Ronny Kirste and Zlatko Sitar

6 Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics

Raphaël Butté, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-François Carlin, and Nicolas Grandjean

9 GaN-based single-nanowire devices

Rudeesun Songmuang and Eva Monroy

11 Nitride-based electron devices for high-power/high-frequency applications11

Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomás Palacios

12 Intersubband transitions in low-dimensional nitrides

Maria Tchernycheva and François H. Julien

13 The slow light in gallium nitride

Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil

16 Terahertz emission in polaritonic systems with nitrides

Oleksandr Kyriienko, Ivan A. Shelykh, and Alexey V. Kavokin

End Matter